1ED020I12-F Infineon Technologies, 1ED020I12-F Datasheet - Page 13

• Manufacturer Part Number: 1ED020I12-F
• Description: MOSFET & Power Driver ICs SNGL IGBT Driver IC IGBT Driver IC
• Manufacturer: Infineon Technologies

Specifications of 1ED020I12-F

• Product: Driver ICs - Various
• Rise Time: 400 ns
• Fall Time: 600 ns
• Supply Voltage (max): 5.5 V, 20 V, 0 V
• Supply Voltage (min): 4.5 V, 13 V, - 12 V
• Maximum Power Dissipation: 700 mW
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Package / Case: PG-DSO-16-15
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.4.3
Parameter
High Level Output Voltage
High Level Output Peak Current
Low Level Output Voltage
Low Level Output Peak Current
4.4.4
Parameter
Low Level Clamp Voltage
Low Level Clamp Current
Clamp Threshold Voltage
1) The parameter is not subject to production test - verified by design/characterization
Datasheet
Gate Driver
Active Miller Clamp
Symbol
V
V
V
V
I
V
V
V
V
I
Symbol
V
V
V
I
V
OUTH
OUTL
CLAMPL
OUTH1
OUTH2
OUTH3
OUTH4
OUTL1
OUTL2
OUTL3
OUTL4
CLAMPL1
CLAMPL2
CLAMPL3
CLAMP
min.
V
V
V
min.
VCC2
VCC2
VCC2
-1.5
1.5
1.6
—
—
—
2
-1.2 V
-2.5 V
-9
13
typ.
V
V
V
V
V
V
typ.
V
V
V
Limit Values
Limit Values
VCC2
VCC2
VCC2
VCC2
VEE2
VEE2
VEE2
VEE2
VEE2
VEE2
VEE2
2.1
-2
2
+0.04 V
+0.5
+2.5
+7
+0.03 V
+0.3
+1.9
-0.8
-2
-5
-10
max.
V
V
max.
V
V
VEE2
VEE2
VEE2
VEE2
VEE2
VEE2
2.4
—
—
+0.09
+0.85
+5.0
+0.08
+0.8
+4.8
Unit Test Conditions
Unit Test Conditions
V
V
V
V
A
V
V
V
V
A
V
V
V
A
V
I
I
I
1)
Related to VEE2
I
I
I
I
IN+ = High, IN- = Low;
OUT = High
I
I
I
I
IN+ = Low, IN- = Low;
OUT = Low
Version 2.2, 2009-12-03
OUTH
OUTH
OUTH
OUTH
OUTL
OUTL
OUTL
OUTL
OUTL
OUTL
OUTL
Electrical Parameters
EICEDRIVER
= 20mA
= 200mA
= 1A
= 2A
= 20mA
= 200mA
= 1A
= -20mA
= -200mA
= -1A
= -2A
1ED020I12-F
TM