SSM3K105TU(TE85L) Toshiba, SSM3K105TU(TE85L) Datasheet - Page 4

• Manufacturer Part Number: SSM3K105TU(TE85L)
• Description: MOSFET Small Signal Vds=30V Id=2.1A 3Pin
• Manufacturer: Toshiba

Specifications of SSM3K105TU(TE85L)

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Forward Transconductance Gfs (max / Min): 2 S / 1 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 800 mW
• Mounting Style: SMD/SMT
• Package / Case: UFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
800
600
400
200
0
0
b
a
20
Ambient temperature Ta(°C)
40
60
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
PD - Ta
80
100 120 140 160
4
1000
100
10
1
0.001
0.01
0.1
Pulse w idth tw (S)
Rth - tw
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
1
c
b
a
10
SSM3K105TU
100
2005-04-12
1000