SSM3K105TU(TE85L) Toshiba, SSM3K105TU(TE85L) Datasheet - Page 2

• Manufacturer Part Number: SSM3K105TU(TE85L)
• Description: MOSFET Small Signal Vds=30V Id=2.1A 3Pin
• Manufacturer: Toshiba

Specifications of SSM3K105TU(TE85L)

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Forward Transconductance Gfs (max / Min): 2 S / 1 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 800 mW
• Mounting Style: SMD/SMT
• Package / Case: UFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Time Test Circuit
Marking
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
Handling Precaution
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
V
Take this into consideration when using the device.
The recommended V
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
1
KK5
4 V
0
3
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
DD
G
IN
10 µs
: t
= 10 Ω
= 15 V
r
, t
2
f
< 5 ns
GS
IN
voltage for turning on this product is 3.3 V or higher.
Equivalent Circuit
V
DD
OUT
GS (on)
1
GS (off)
(b) V
(c) V
requires a higher voltage than V
3
< V
2
OUT
IN
th
2
(top view)
< V
GS (on)
)
V
DS (ON)
V
4 V
0 V
DD
th,
and V
t
10%
on
t
GS (off)
r
SSM3K105TU
10%
90%
requires a lower
2005-04-12
90%
t
D
off
t
=0.1mA for
f