SSM3K116TU(TE85L) Toshiba, SSM3K116TU(TE85L) Datasheet - Page 4

• Manufacturer Part Number: SSM3K116TU(TE85L)
• Description: MOSFET Small Signal Vds=30V Id=2.2A 3Pin
• Manufacturer: Toshiba

Specifications of SSM3K116TU(TE85L)

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 2 S / 1 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 800 mW
• Mounting Style: SMD/SMT
• Package / Case: 2-2U1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100
800
600
400
200
10
10
1
0
0.01
0
0.1
0
b
a
20
-25°C
Ambient temperature Ta(°C)
Drain-Source voltage VDS (V)
40
25°C
0.1
Drain current ID (A)
1
60
C - VDS
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
|Yfs| - ID
Ta=100°C
PD - Ta
80 100 120 140 160
Common Source
VDS=3V
Ta=25°C
10
Common Source
VGS=0V
f =1MHz
Ta=25°C
1
Ciss
Coss
Crss
100
10
4
1000
0.01
1000
100
0.1
100
10
10
1
10
1
1
0.01
0.001
0
Common Source
VGS=0V
Ta=25°C
G
0.01
-0.2
toff
tf
tr
ton
S
D
Drain-Source voltage VDS (V)
IDR
0.1
Drain current ID (A)
0.1
Pulse w idth tw (S)
-0.4
IDR - VDS
t - ID
Rth - tw
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
SSM3K116TU
1
Common Source
VDD=10V
VGS=0~2.5V
Ta=25°C
-0.6
c
b
a
2005-06-15
1
10
-0.8
100
-1
1000
10