SSM3K116TU(TE85L) Toshiba, SSM3K116TU(TE85L) Datasheet
SSM3K116TU(TE85L)
Manufacturer Part Number
SSM3K116TU(TE85L)
Description
MOSFET Small Signal Vds=30V Id=2.2A 3Pin
Manufacturer
Toshiba
Datasheet
1.SSM3K116TUTE85L.pdf
(5 pages)
Specifications of SSM3K116TU(TE85L)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.095 Ohms
Forward Transconductance Gfs (max / Min)
2 S / 1 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
2.2 A
Power Dissipation
800 mW
Mounting Style
SMD/SMT
Package / Case
2-2U1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Speed Switching Applications
•
•
•
Maximum Ratings
Electrical Characteristics
Note1: Mounted on ceramic board.
Note2: Mounted on FR4 board.
Note3: Pulse test
2.5V drive
Low on-resistance:
Lead(Pb)-free
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain-Source forward voltage
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(Ta = 25°C)
DC
Pulse
R
R
on
on
= 135mΩ (max) (@V
= 100mΩ (max) (@V
(Ta = 25°C)
SSM3K116TU
V
V
R
P
P
Symbol
(BR) DSS
(BR) DSX
Symbol
⏐Y
DS (ON)
V
D (Note1)
D (Note2)
I
I
C
V
C
C
GSS
DSS
V
V
t
t
T
DSF
T
I
oss
on
off
GSS
rss
I
DP
iss
stg
th
fs
DS
D
ch
⏐
I
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
D
GS
GS
DS
GS
DS
DS
DS
DS
DS
DD
GS
= 1 mA, V
= 1 mA, V
= 0.5 A, V
= 0.25 A, V
= −2.2A, V
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
−55~150
= ±12V, V
= 10 V, I
= 0~2.5 V, R
= 2.5 V)
= 4.5 V)
Rating
± 12
800
500
150
2.2
4.4
30
1
2
2
D
D
)
)
Test Conditions
GS
GS
GS
GS
D
GS
GS
= 0.1 mA
= 0.25 A
GS
GS
GS
DS
= 0.25 A,
= 0
= −12 V
= 4.5 V
= 0 V
= 2.5 V
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note3)
(Note3)
(Note3)
(Note3)
Weight: 6.6 mg (typ.)
JEDEC
JEITA
TOSHIBA
UFM
Min
0.5
30
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1 :Gate
2 :Source
3 :Drain
−0.83
1
2
SSM3K116TU
Typ.
245
75
95
41
33
15
⎯
⎯
⎯
⎯
⎯
2
9
2.1±0.1
1.7±0.1
2-2U1A
2005-06-15
―
―
Max
-1.2
100
135
1.1
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit: mm
3
Unit
mΩ
µA
µA
pF
pF
pF
ns
V
V
S
V
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SSM3K116TU(TE85L) Summary of contents
Page 1
... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications • 2.5V drive • Low on-resistance 135mΩ (max) (@ 100mΩ (max) (@V on • Lead(Pb)-free Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse ...
Page 2
Switching Time Test Circuit (a) Test Circuit 2 µ 4.7 Ω D.U. < < Common Source ...
Page 3
ID - VDS 5 10 4.5 2.5 4 1.8 3 VGS=1. Common Source Ta=25° 0.2 0.4 0.6 0.8 Drain-Source voltage VDS (V) RDS(ON 200 Common Source 180 Ta=25°C 160 140 120 2.5V 100 VGS=4.5V ...
Page 4
ID 10 25°C -25°C Ta=100°C 1 Common Source VDS=3V Ta=25°C 0 0.01 0.1 1 Drain current ID ( VDS 1000 Common Source VGS=0V f =1MHz Ta=25°C 100 10 0 Drain-Source voltage VDS (V) PD ...
Page 5
SSM3K116TU 5 2005-06-15 ...