SSM3K116TU Toshiba Semiconductor, SSM3K116TU Datasheet

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SSM3K116TU

Manufacturer Part Number
SSM3K116TU
Description
Silicon N Channel MOS Type High Speed Switching Applications
Manufacturer
Toshiba Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM3K116TU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
www.DataSheet4U.com
High Speed Switching Applications
Absolute Maximum Ratings
Electrical Characteristics
Note:
Note 1: Mounted on ceramic board.
Note 2: Mounted on FR4 board.
Note3: Pulse test
2.5V drive
Low on-resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain-Source forward voltage
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
DC
Pulse
R
R
on
on
= 135mΩ (max) (@V
= 100mΩ (max) (@V
(Ta = 25°C)
SSM3K116TU
V
V
R
P
P
(Ta = 25°C)
Symbol
(BR) DSS
(BR) DSX
Symbol
⏐Y
D (Note 1)
D (Note 2)
DS (ON)
V
I
I
C
C
V
C
DSS
GSS
V
V
t
t
T
DSF
I
T
oss
on
off
GSS
iss
rss
I
DP
th
DS
stg
fs
D
ch
I
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
D
GS
GS
DS
GS
DS
DS
DS
DS
DS
DD
GS
= 1 mA, V
= 1 mA, V
= 0.5 A, V
= 0.25 A, V
= −2.2A, V
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
−55~150
= ±12V, V
= 10 V, I
= 0~2.5 V, R
= 2.5 V)
= 4.5 V)
Rating
± 12
800
500
150
2.2
4.4
30
1
2
2
D
D
Test Conditions
GS
GS
GS
)
)
GS
D
GS
= 0.1 mA
= 0.25 A
GS
GS
GS
GS
DS
= 0.25 A,
= 0
= −12 V
= 4.5 V
= 0 V
= 2.5 V
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
= 0
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note3)
(Note3)
(Note3)
(Note3)
Weight: 6.6 mg (typ.)
JEDEC
JEITA
TOSHIBA
UFM
Min
0.5
30
18
1
1: Gate
2: Source
3: Drain
−0.83
1
2
Typ.
SSM3K116TU
245
75
95
41
33
15
2
9
2.1±0.1
1.7±0.1
2-2U1A
2007-11-01
Max
100
135
-1.2
1.1
±1
1
Unit: mm
3
Unit
μA
μA
pF
pF
pF
ns
V
V
V
S

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SSM3K116TU Summary of contents

Page 1

... C V oss rss 0~2 off = −2.2A DSF SSM3K116TU 1 Unit °C °C 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA Weight: 6.6 mg (typ.) Min Typ ⎯ −12 V ⎯ ⎯ ⎯ ...

Page 2

... V IN OUT (c) V OUT V DD Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on) 2 SSM3K116TU 2.5 V 90% 10 10% 90 (ON off =0.1mA for D ...

Page 3

... Ambient temperature Ta (°C) 2.5 1.8 VGS=1.5V Common Source Ta=25°C 0.6 0.8 1 Common Source Ta=25° 2.5V,0.25A 80 100 120 140 160 3 SSM3K116TU ID - VGS 10 1 0.1 Ta=100°C 0.01 25°C -25°C 0.001 Common Source VDS=3V 0.0001 Gate-Source voltage VGS (V) RDS(ON) - VGS 400 Common Source 350 ID=0 ...

Page 4

... Ambient temperature Ta(°C) Common Source VDS=3V Ta=25° Common Source VGS=0V f=1MHz Ta=25°C Ciss Coss Crss 10 100 4 SSM3K116TU IDR - VDS 10 Common Source VGS=0V Ta=25° IDR G S 0.1 0.01 0 -0.2 -0.4 -0.6 Drain-Source voltage VDS ( 1000 Common Source VDD=10V VGS=0~2.5V Ta=25° ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K116TU 20070701-EN GENERAL 2007-11-01 ...

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