SSM3K116TU(TE85L) Toshiba, SSM3K116TU(TE85L) Datasheet - Page 3

• Manufacturer Part Number: SSM3K116TU(TE85L)
• Description: MOSFET Small Signal Vds=30V Id=2.2A 3Pin
• Manufacturer: Toshiba

Specifications of SSM3K116TU(TE85L)

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 2 S / 1 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 800 mW
• Mounting Style: SMD/SMT
• Package / Case: 2-2U1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5
4
3
2
1
0
200
180
160
140
120
100
300
250
200
150
100
0
80
60
40
20
50
0
0
-60 -40 -20
0
Common Source
0.2
10
Drain-Source voltage VDS (V)
1
VGS=4.5V
Ambient temperature Ta (°C)
0
Drain current ID (A)
0.4
RDS(ON) - ID
2.5V
RDS(ON) - Ta
20
4.5
ID - VDS
2
40 60
VGS=4.5V,ID=0.5A
Common Source
Ta=25°C
2.5
0.6
Common Source
Ta=25°C
3
80 100 120 140 160
2.5V,0.25A
VGS=1.5V
0.8
4
1.8
1
5
3
0.0001
0.001
0.01
400
350
300
250
200
150
100
0.1
10
50
0.8
0.6
0.4
0.2
1
0
1
0
-60 -40 -20 0
0
0
Ta=100°C
1
Gate-Source voltage VGS (V)
Gate-Source voltage VGS (V)
2
Ambient temperature Ta (°C)
3
1
-25°C
20 40 60 80 100 120 140 160
RDS(ON) - VGS
4
ID - VGS
25°C
Vth - Ta
25°C
5
SSM3K116TU
Common Source
VDS=3V
Common Source
ID=0.1mA
VDS=3V
6
Common Source
ID=0.5A
2
2005-06-15
7
-25°C
Ta=100°C
8
9
10
3