SI7388DP-T1-E3 Vishay, SI7388DP-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7388DP-T1-E3
• Description: MOSFET Small Signal 30V 19A 5.0W 7.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7388DP-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 5W
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71919.
Document Number: 71919
S-80438-Rev. E, 03-Mar-08
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10
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Duty Cycle = 0.5
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
10
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Vishay Siliconix
Si7388DP
www.vishay.com
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