SI7388DP-T1-E3 Vishay, SI7388DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7388DP-T1-E3
• Description: MOSFET Small Signal 30V 19A 5.0W 7.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7388DP-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 5W
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7388DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
0.1
-0.2
-0.4
-0.6
-0.8
2
1
0.4
0.2
0.0
10
- 50
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
10
Threshold Voltage
I
T
D
- 3
J
= 250 µA
25
- Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
50
by R
Limited
0.01
100
0.1
DS(on)*
10
1
75
0.1
10
- 2
* V
Safe Operating Area, Junction-to-Case
100
GS
> minimum V
V
125
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (s)
C
1
150
= 25 °C
10
GS
- 1
at which R
DS(on)
10
1
is specified
200
160
120
80
40
0
0.001
1 s
1 ms
10 ms
100 ms
10 s
DC
100
10
0.01
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
- T
t
1
A
= P
t
2
Time (s)
DM
0.1
Z
S-80438-Rev. E, 03-Mar-08
thJA
Document Number: 71919
thJA
100
t
t
1
2
(t)
= 68 °C/W
1
600
10