Si7388DP Vishay Intertechnology, Si7388DP Datasheet
Si7388DP
Manufacturer Part Number
Si7388DP
Description
N-channel Reduced Qg, Fast Switching MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7388DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7388DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71919
S-31728—Rev. C, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
N-Channel Reduced Q
8
6.15 mm
D
J
J
a
a
0.010 @ V
0.007 @ V
Ordering Information: Si7388DP-T1
= 150_C)
= 150_C)
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
GS
PowerPAK SO-8
GS
Bottom View
5
a
a
(W)
= 4.5 V
= 10 V
D
a
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
t v 10 sec
T
T
T
T
A
A
A
A
4
I
= 25_C
= 70_C
= 25_C
= 70_C
G
D
19
15
(A)
g
, Fast Switching MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJC
I
I
I
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D DC/DC Synchronous Rectifier
Package with Low 1.07-mm Profile
10 secs
Typical
G
4.1
3.2
2.0
19
15
20
55
5
N-Channel MOSFET
g
Tested
-55 to 150
"20
"50
30
D
S
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
2.6
12
25
65
9
Si7388DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1