SI7388DP-T1-E3 Vishay, SI7388DP-T1-E3 Datasheet

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... Bottom View Ordering Information: Si7388DP-T1-E3 (Lead (Pb)-free) Si7388DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si7388DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

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... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71919 S-80438-Rev. E, 03-Mar-08 2500 2000 1500 1000 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si7388DP Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1 1.4 1.2 1.0 0.8 ...

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... Si7388DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 -0.2 -0.4 -0.6 -0 Temperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 75 100 125 150 ...

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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71919. Document Number: 71919 S-80438-Rev. E, 03-Mar- Square Wave Pulse Duration (s) Si7388DP Vishay Siliconix 1 10 www.vishay.com 5 ...

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