BSP123 L6327 Infineon Technologies, BSP123 L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP123 L6327
• Description: MOSFET Small Signal N-CH 100 V 0.37 A
• Manufacturer: Infineon Technologies

Specifications of BSP123 L6327

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP123L6327XT

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP123
0.2 V
0.5 V
0.8 V
I
D
0.4
G
DS max
DS max
DS max
= 0.37 A pulsed, T
); parameter: V
0.8
1.2
1.6
DS
j
2
= 25 °C
,
nC
Q
G
2.8
Page 7
Rev. 1.5
14 Drain-source breakdown voltage
V
(BR)DSS
120
114
112
110
108
106
104
102
100
V
98
96
94
92
90
-60
BSP123
= f (T
-20
j
)
20
60
100
2010-06-22
BSP123
°C
T
j
180