BSP123 L6327 Infineon Technologies, BSP123 L6327 Datasheet

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BSP123 L6327

Manufacturer Part Number

BSP123 L6327

Description

MOSFET Small Signal N-CH 100 V 0.37 A

Manufacturer

Infineon Technologies

Datasheets

1.BSP123_L6327.pdf (9 pages)

2.BSP123_L6327.pdf (8 pages)

Specifications of BSP123 L6327

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.37 A

Power Dissipation

1790 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-223

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSP123L6327XT

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•

• Qualified according to AEC Q101

Feature

SIPMOS

Type

BSP123

BSP123

Maximum Ratings, at T

Parameter

Continuous drain current

T

T

Pulsed drain current

T

Reverse diode dv/dt

I

Gate source voltage

ESD Class JESD22-A114-HBM

Power dissipation

T

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

S

A

A

A

A

N-Channel

Enhancement mode

Logic Level

dv/dt rated

Pb-free lead plating; RoHS compliant

=0.37A, V

=25°C

=70°C

=25°C

=25°C

DS

=80V, di/dt=200A/µs, T

Small-Signal-Transistor

Package

PG-SOT223

PG-SOT223

j

= 25 °C, unless otherwise specified

Tape and Reel Information

L6433: 4000 pcs/reel

L6327: 1000 pcs/reel

jmax

=150°C

Page 1

Rev. 1.5

Symbol

I

I

dv/dt

V

P

T

D

D puls

j ,

GS

tot

T

stg

Marking

BSP123

BSP123

BSP123

-55... +150

55/150/56

0 (<250V)

Product Summary

V

R

I

Value

D

0.37

DS

1.48

1.79

DS(on)

±20

0.3

6

Packaging

Non dry

Non dry

PG-SOT223

2010-06-22

0.37

100

6

BSP123

Unit

A

kV/µs

V

W

°C

V

A

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