BSP123 Infineon Technologies, BSP123 Datasheet

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BSP123

Manufacturer Part Number
BSP123
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP123

Package
SOT-223
Vds (max)
100.0 V
Rds (on) (max) (@10v)
6,000.0 mOhm
Rds (on) (max) (@4.5v)
10,000.0 mOhm
Rds (on) (max) (@2.5v)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP123
Manufacturer:
INF
Quantity:
1 446
Part Number:
BSP123
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSP123
Manufacturer:
PHL/INF
Quantity:
20 000
• Qualified according to AEC Q101
Feature
SIPMOS
Type
BSP123
BSP123
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Class JESD22-A114-HBM
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Pb-free lead plating; RoHS compliant
=0.37A, V
=25°C
=70°C
=25°C
=25°C
DS
=80V, di/dt=200A/µs, T
Small-Signal-Transistor
Package
PG-SOT223
PG-SOT223
j
= 25 °C, unless otherwise specified
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
jmax
=150°C
Page 1
Rev. 1.5
Symbol
I
I
dv/dt
V
P
T
D
D puls
j ,
GS
tot
T
stg
Marking
BSP123
BSP123
BSP123
-55... +150
55/150/56
0 (<250V)
Product Summary
V
R
I
Value
D
0.37
DS
1.48
1.79
DS(on)
±20
0.3
6
Packaging
Non dry
Non dry
PG-SOT223
2010-06-22
0.37
100
6
BSP123
Unit
A
kV/µs
V
W
°C
V
A

Related parts for BSP123

BSP123 Summary of contents

Page 1

... Symbol puls dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT223 Marking Packaging Non dry BSP123 BSP123 Non dry BSP123 Value 0.37 0.3 1.48 6 ± (<250V) 1.79 tot -55... +150 T stg 55/150/56 BSP123 100 V 6 0.37 A Unit A kV/µ °C 2010-06-22 ...

Page 2

... PCB is vertical without blown air. Rev. 1.5 Symbol °C, unless otherwise specified j Symbol DSS I GSS Page 2 Values min. typ thJS thJA - 100 - 51 Values min. typ. max. 100 - (BR)DSS 0.8 1.4 GS(th DS(on) - 4.8 DS(on) - 3.5 DS(on) BSP123 Unit max. 25 K/W 115 70 Unit - V 1.8 µA 0. 2010-06-22 ...

Page 3

... =80V, I =0.37A 10V V GS =80V 0. (plateau =25° = =50V /dt=100A/µ Page 3 BSP123 Values min. typ. max. 0.13 0. 11.3 - 3.5 4 3.2 4 0.09 0. 0.8 1.2 - 1.6 2 1.48 - 0.9 1 ...

Page 4

... K 21.0ms Page BSP123 100 120 = BSP123 single pulse - 2010-06-2 BSP123 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... A 0.5 0.4 0.3 0.2 0 0.5 1 1.5 2 2.5 Rev. 1.5 6 Typ. drain-source on resistance R DS(on) parameter 3 Typ. forward transconductance = f(I g DS(on)max fs parameter: T 0.4 S 0.3 0.25 0.2 0.15 0 Page ° 0.1 0.2 0.3 0.4 0 ° 0.1 0.2 0.3 0.4 0.5 2010-06-22 BSP123 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V ...

Page 6

... V DS Page =50µ 2.2 V 98% 1.8 1.6 1.4 typ. 1 0.8 0.6 0.4 0.2 0 -60 - BSP123 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 BSP123 °C 100 160 2 2010-06-22 ...

Page 7

... 0 max 0 max 6 0 max 0.4 0.8 1.2 1.6 Rev. 1.5 14 Drain-source breakdown voltage , V DS (BR)DSS = 25 °C j 120 V 114 112 110 108 106 104 102 100 2.8 - Page BSP123 - 100 2010-06-22 BSP123 °C 180 T j ...

Page 8

... Package Oultline: PG-SOT223 Footprint: Dimensions in mm Rev. 1.5 Page 8 BSP123 2010-06-22 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 (www.infineon.com). Page 9 BSP123 2010-06-22 ...

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