VP2206N3-G Supertex, VP2206N3-G Datasheet - Page 4

• Manufacturer Part Number: VP2206N3-G
• Description: MOSFET Small Signal 60V 0.9Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of VP2206N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.64 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.9Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
400
300
200
100
-10
Supertex inc.
1.1
1.0
0.9
-8
-6
-4
-2
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
DS
BV
= -25V
DSS
-2
Transfer Characteristics
-10
0
Variation with Temperature
f = 1.0MHz
V
-4
GS
V
DS
T
(volts)
j
-20
(volts)
50
(
O
C)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
ISS
150
-10
-40
4
-10
1.2
1.1
1.0
0.9
0.8
0.7
-8
-6
-4
-2
5
4
3
2
1
0
0
-50
0
0
●
V
Gate Drive Dynamic Characteristics
(th)
Tel: [phone]
310 pF
On-Resistance vs. Drain Current
and R
-2
V
2
GS
0
= -5.0V
Q
DS
G
V
Variation with Temperature
(nanocoulombs)
DS
I
D
-4
4
= -10V
(amperes)
T
j
50
(
R
O
DS(ON)
C)
●
V
-6
(th)
6
www.supertex.com
@ -10V, -3.5A
@ -1.0mA
V
725 pF
DS
100
= -40V
V
GS
-8
8
= -10V
-10
150
10
2.0
1.6
1.2
0.8
0.4
0
VP2206