VP2206N3-G Supertex, VP2206N3-G Datasheet

VP2206N3-G

Manufacturer Part Number

VP2206N3-G

Description

MOSFET Small Signal 60V 0.9Ohm

Manufacturer

Supertex

Type

Power MOSFETr

Datasheet

1.VP2206N3-G.pdf (6 pages)

Specifications of VP2206N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.9 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.64 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.9Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G

†

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

VP2206

Device

indicates package is RoHS compliant (‘Green’)

package is RoHS compliant (‘Green’)

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

ISS

Supertex inc.

and fast switching speeds

VP2206N2

TO-39

Package Options

†

●

P-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

VP2206N3-G

TO-92

C to +150

300

Value

±20V

DGS

DSS

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

General Description

The Supertex VP2206 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

DSS

-60

SOURCE

(V)

/BV

TO-39 (N2)

●

DGS

Tel: 408-222-8888

Y Y W W

2 2 0 6

Si VP

YYWW

2206N2

GATE

DRAIN

YY = Year Sealed

WW = Week Sealed

TO-39 (N2)

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

(max)

= “Green” Packaging

DS(ON)

0.9

●

(Ω)

www.supertex.com

SOURCE

TO-92 (N3)

DRAIN

VP2206

GATE

(min)

-4.0

D(ON)

(A)

Related parts for VP2206N3-G

VP2206N3-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. BV DSS TO-92 VP2206N3-G Pin Conﬁguration Product Marking Value BV DSS BV DGS ± ...

Page 2

... Diode forward voltage drop SD t Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t d(ON) 0V OUTPUT 10% VDD Supertex inc Power Dissipation D D † (pulsed (A) (A) (W) -0.75 -8.0 6.0 -0.64 -4.0 1.0 . ...

Page 3

... Transconductance vs. Drain Current -25V (amperes) D Maximum Rated Safe Operating Area -10 TO-39 (pulsed) TO-92 (pulsed) TO-39 (DC) -1.0 -0.1 TO-92 (DC 25°C -0.01 -1 -10 V (volts) DS Supertex inc -10V GS -8V -6V -4V -3V -30 - 125 -10 -100 -1000 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics - -10V GS ...

Page 4

... Transfer Characteristics - -25V (volts) GS Capacitance vs. Drain-to-Source Voltage 400 f = 1.0MHz 300 200 100 0 0 -10 -20 V (volts) DS Supertex inc. (cont.) 100 150 -6 -8 -10 C ISS -30 -40 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current -5. -10V (amperes and R Variation with Temperature (th ...

Page 5

... Bottom View Symbol α MIN Dimension 45 O NOM (inches) NOM NOM MAX JEDEC Registration TO-39. * This dimension is not speciﬁed in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO39N2, Version B052009. Supertex inc. β β A Φa Φb .240 .190 .016 ...

Page 6

... This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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