FS75R12KE3 Infineon Technologies, FS75R12KE3 Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
FS75R12KE3
Manufacturer Part Number
FS75R12KE3
Description
IGBT Modules 1200V 75A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet
1.FS75R12KE3.pdf
(9 pages)
Specifications of FS75R12KE3
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Continuous Collector Current At 25 C
75 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
350 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK2
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Ic (max)
75.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPACK 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS75R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS75R12KE3
Quantity:
55
Company:
Part Number:
FS75R12KE3-B3
Manufacturer:
IXYS
Quantity:
87
Part Number:
FS75R12KE3-B3
Quantity:
145
Company:
Part Number:
FS75R12KE3G
Manufacturer:
INFINEON
Quantity:
200
Part Number:
FS75R12KE3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS75R12KE3G
Quantity:
55
Part Number:
FS75R12KE3_B9
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IGBT-Module
IGBT-Modules
Technische Information / technical information
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
FS75R12KE3
8 (8)
DB_FS75R12KE3_3.0 .xls
2002-09-03