FS75R12KE3 Infineon Technologies, FS75R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FS75R12KE3
• Description: IGBT Modules 1200V 75A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
175
150
125
100
75
50
25
0,01
0
0,1
r
r
1
0,001
i
0
i
τ
τ
[K/W] : Diode
[K/W] : IGBT
i
i
[s] : Diode
[s] : IGBT
i
200
IC,Chip
IC,Modul
0,01
3,949E-02
2,345E-03
5,906E-02
3,333E-03
400
1
FS75R12KE3
7 (8)
600
6,139E-02
2,820E-01
3,815E-01
3,429E-02
V
CE
t [s]
2
0,1
[V]
800
V
Z
GE
1,580E-01
2,820E-02
1,099E-01
1,294E-01
thJC
=±15V, R
3
= f (t)
1000
1
G
=4,7Ω, T
Zth : IGBT
Zth : Diode
8,884E-02
1,128E-01
3,480E-02
7,662E-01
DB_FS75R12KE3_3.0 .xls
1200
4
vj
=125°C
1400
2002-09-03
10