FS75R12KE3 Infineon Technologies, FS75R12KE3 Datasheet - Page 5

• Manufacturer Part Number: FS75R12KE3
• Description: IGBT Modules 1200V 75A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of FS75R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
Technische Information / technical information
150
125
100
150
125
100
75
50
25
75
50
25
0
0
0,0
4
0,2
5
0,4
Tvj = 25°C
Tvj = 125°C
0,6
Tvj=25°C
Tvj=125°C
6
0,8
FS75R12KE3
5 (8)
7
1,0
V
V
GE
1,2
F
8
[V]
[V]
1,4
9
1,6
I
V
I
C
F
CE
= f(V
= f(V
= 20V
1,8
10
F
GE
)
DB_FS75R12KE3_3.0 .xls
)
2,0
11
2,2
2002-09-03
2,4
12