PC357N8J000F Sharp Microelectronics, PC357N8J000F Datasheet - Page 9

• Manufacturer Part Number: PC357N8J000F
• Description: Transistor Output Optocouplers 80-400% CTR ranked PC357NJ0000F
• Manufacturer: Sharp Microelectronics

Specifications of PC357N8J000F

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 200 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 170 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 30 C
• Package / Case: Mini-Flat
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

■ Design Considerations
■ Design Considerations
● Degradation
● Recommended Foot Print (reference)
● Design guide
✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes.
While operating at I
Please make design considering this fact.
This product is not designed against irradiation and incorporates non-coherent IRED.
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
F
<1.0mA, CTR variation may increase.
1.5
9
6.3
PC357NJ0000F Series
Sheet No.: D2-A00102EN
(Unit : mm)