AT91SAM7SE256B-CUR Atmel, AT91SAM7SE256B-CUR Datasheet - Page 21
![IC ARM7 MCU FLASH 256K 128-LQFP](/photos/39/70/397007/bga-144_sml.jpg)
AT91SAM7SE256B-CUR
Manufacturer Part Number
AT91SAM7SE256B-CUR
Description
IC ARM7 MCU FLASH 256K 128-LQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM7SE256-AU.pdf
(673 pages)
Specifications of AT91SAM7SE256B-CUR
Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
EBI/EMI, I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
88
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
SAM7SE256
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
SPI, USB
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
88
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 85 C
Processor To Be Evaluated
AT91SAM7SE256B
Supply Current (max)
60 uA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 21 of 673
- Download datasheet (11Mb)
8. Memories
6222F–ATARM–14-Jan-11
• 512 Kbytes of Flash Memory (SAM7SE512)
• 256 Kbytes of Flash Memory (SAM7SE256)
• 32 Kbytes of Flash Memory (SAM7SE32)
• 32 Kbytes of Fast SRAM (SAM7SE512/256)
• 8 Kbytes of Fast SRAM (SAM7SE32)
– dual plane
– two contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, each protecting 32 lock regions of 64 pages
– Protection Mode to secure contents of the Flash
– single plane
– one bank of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 lock regions of 64 pages
– Protection Mode to secure contents of the Flash
– single plane
– one bank of 256 pages of 128 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 lock regions of 32 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– Single-cycle access at full speed
SAM7SE512/256/32 Preliminary
21
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