BF1107,215 NXP Semiconductors, BF1107,215 Datasheet - Page 2

• Manufacturer Part Number: BF1107,215
• Description: MOSFET N-CH 3V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF1107,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current Rating: 10mA
• Transistor Type: N-Channel
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 Ohms
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 10 mA
• Mounting Style: SMD/SMT
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 3V
• Package Type: TO-236AB
• Pin Count: 3
• Drain Source Resistance (max): 20000@0Vmohm
• Output Capacitance (typ)@vds: 1.5pF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BF1107_4
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
BF1107
Type number
BF1107
Symbol
V
V
V
V
I
T
T
D
stg
j
DS
SD
DG
SG
Drain and source are interchangeable
Discrete pinning
Ordering information
Marking
Limiting values
Parameter
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
storage temperature
junction temperature
Description
drain
source
gate
Package
Name
-
Rev. 04 — 9 January 2007
Description
plastic surface-mounted package; 3 leads
[1]
[1]
Conditions
Marking code
S3p
Simplified outline
1
N-channel single gate MOSFET
Min
-
-
-
-
-
-
3
65
2
Symbol
Max
3
3
7
7
10
150
© NXP B.V. 2007. All rights reserved.
150
BF1107
3
sym120
Unit
V
V
V
V
mA
C
C
Version
SOT23
1
2
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