BF1107,215 NXP Semiconductors, BF1107,215 Datasheet

MOSFET N-CH 3V 10MA SOT23

BF1107,215

Manufacturer Part Number
BF1107,215
Description
MOSFET N-CH 3V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1107,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current Rating
10mA
Transistor Type
N-Channel
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 Ohms
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
7 V
Continuous Drain Current
10 mA
Mounting Style
SMD/SMT
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
3V
Package Type
TO-236AB
Pin Count
3
Drain Source Resistance (max)
20000@0Vmohm
Output Capacitance (typ)@vds
1.5pF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Compliant
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.
I
I
Table 1.
Symbol
L
ISL
R
V
ins(on)
GS(p)
DSon
BF1107
N-channel single gate MOSFET
Rev. 04 — 9 January 2007
Currentless RF switch
Various RF switching applications such as:
off
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Passive loop through for VCR tuner
Transceiver switching
Quick reference data
Parameter
on-state insertion loss V
off-state isolation
drain-source on-state
resistance
gate-source pinch-off
voltage
Conditions
f = 50 MHz to 860 MHz
V
f = 50 MHz to 860 MHz
V
V
SG
SG
GS
DS
R
R
R
R
S
S
S
S
= V
= V
= 0 V; I
= 1 V; I
= R
= R
= R
= R
DG
DG
L
L
L
L
= 50
= 75
= 50
= 75
= 0 V;
= 5 V;
D
D
= 1 mA
= 20 A
Min
-
-
30
30
-
-
Product data sheet
Typ
-
-
-
-
12
3
Max
2.5
3.5
-
-
20
4.5
Unit
dB
dB
dB
dB
V

Related parts for BF1107,215

BF1107,215 Summary of contents

Page 1

BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Drain and source are interchangeable 3. Ordering information Table 3. Type number BF1107 4. Marking Table 4. Type number BF1107 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BF1107_4 Product data sheet ...

Page 3

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-sp) [1] Soldering point of the gate lead. 7. Static characteristics Table 7. Static characteristics Symbol Parameter V gate-source breakdown voltage (BR)GSS V gate-source pinch-off voltage GS(p) I drain cut-off current DSX I gate leakage current GSS 8. Dynamic characteristics Table 8. Dynamic characteristics Common gate ...

Page 4

... NXP Semiconductors 0 L ins(on) (dB) ( Fig 1. On-state insertion loss as a function of frequency; typical values Fig 3. Input and output return loss (on-state function of frequency; typical values BF1107_4 Product data sheet 001aaf760 ISL off (dB (MHz) (1) R (2) R Fig 2. Off-state isolation as a function of frequency; ...

Page 5

... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 4. Package outline SOT23 BF1107_4 Product data sheet scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...

Page 6

... Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Symbol notation has been adapted to comply with the current guidelines of NXP Semiconductors. • ...

Page 7

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 8

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 3 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6 12 Legal information ...

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