BF1107 NXP Semiconductors, BF1107 Datasheet

Depletion type N-channel Field-Effect Transistor in a SOT23 package

BF1107

Manufacturer Part Number
BF1107
Description
Depletion type N-channel Field-Effect Transistor in a SOT23 package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.
I
I
Table 1.
Symbol
L
ISL
R
V
ins(on)
GS(p)
DSon
BF1107
N-channel single gate MOSFET
Rev. 04 — 9 January 2007
Currentless RF switch
Various RF switching applications such as:
off
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Passive loop through for VCR tuner
Transceiver switching
Quick reference data
Parameter
on-state insertion loss V
off-state isolation
drain-source on-state
resistance
gate-source pinch-off
voltage
Conditions
f = 50 MHz to 860 MHz
V
f = 50 MHz to 860 MHz
V
V
SG
SG
GS
DS
R
R
R
R
S
S
S
S
= V
= V
= 0 V; I
= 1 V; I
= R
= R
= R
= R
DG
DG
L
L
L
L
= 50
= 75
= 50
= 75
= 0 V;
= 5 V;
D
D
= 1 mA
= 20 A
Min
-
-
30
30
-
-
Product data sheet
Typ
-
-
-
-
12
3
Max
2.5
3.5
-
-
20
4.5
Unit
dB
dB
dB
dB
V

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BF1107 Summary of contents

Page 1

... Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges ...

Page 2

... Rev. 04 — 9 January 2007 N-channel single gate MOSFET Simplified outline Symbol [ Marking code S3p Conditions Min Max - 150 - 150 © NXP B.V. 2007. All rights reserved. BF1107 sym120 Version SOT23 Unit ...

Page 3

... MHz MHz Rev. 04 — 9 January 2007 BF1107 N-channel single gate MOSFET Conditions Typ [1] 260 Min Typ Min Typ - - - - 0 ...

Page 4

... Rev. 04 — 9 January 2007 N-channel single gate MOSFET (2) ( (MHz typical values 001aaf781 3 10 © NXP B.V. 2007. All rights reserved. BF1107 001aaf780 ...

Page 5

... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB Rev. 04 — 9 January 2007 N-channel single gate MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION BF1107 SOT23 ISSUE DATE 04-11-04 06-03-16 © NXP B.V. 2007. All rights reserved ...

Page 6

... Legal texts have been adapted to the new company name where appropriate. • Symbol notation has been adapted to comply with the current guidelines of NXP Semiconductors. • Product type BF1107W has been removed from this data sheet. BF1107_1107W_3 19990514 (9397 750 05776) BF1107_2 ...

Page 7

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 9 January 2007 BF1107 N-channel single gate MOSFET © NXP B.V. 2007. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1107 All rights reserved. Date of release: 9 January 2007 Document identifier: BF1107_4 ...

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