STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 8
![MOSFET N-CH 650V 12A TO-247](/photos/29/4/290476/to-247_sml.jpg)
STW16N65M5
Manufacturer Part Number
STW16N65M5
Description
MOSFET N-CH 650V 12A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STW16N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 100V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10973-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
8/20
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
Figure 16. Normalized gate threshold voltage
(norm)
V
GS(th)
1.00
0.70
1.10
0.60
0.90
0.80
V
(V)
12
10
GS
2
8
6
4
0
-50
0
V
DS
vs temperature
5
10
0
15
V
V
I
DD
D
GS
20
50
=6A
=520V
=10V
25
100
30
35
T
V
J
GS
(°C)
Doc ID 15210 Rev 3
Q
AM03182v1
AM03184v1
g
(nC)
500
400
300
200
100
Figure 17. Source-drain diode forward
(norm)
R
DS(on)
(V)
V
0.7
0.6
0.5
0.8
0.4
2.0
1.5
1.0
1.0
0.9
0.5
SD
0
-50
0
temperature
characteristics
T
J
=25°C
0
5
T
J
=-25°C
50
STF/I/P/U/W16N65M5
10
100
T
J
=150°C
I
SD
AM03185v1
AM03186v1
(A)
T
J
(°C)