STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 8

• Manufacturer Part Number: STW16N65M5
• Description: MOSFET N-CH 650V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10973-5

Electrical characteristics
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Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
Figure 16. Normalized gate threshold voltage
(norm)
V
GS(th)
1.00
0.70
1.10
0.60
0.90
0.80
V
(V)
12
10
GS
2
8
6
4
0
-50
0
V
DS
vs temperature
5
10
0
15
V
V
I
DD
D
GS
20
50
=6A
=520V
=10V
25
100
30
35
T
V
J
GS
(°C)
Doc ID 15210 Rev 3
Q
AM03182v1
AM03184v1
g
(nC)
500
400
300
200
100
Figure 17. Source-drain diode forward
(norm)
R
DS(on)
(V)
V
0.7
0.6
0.5
0.8
0.4
2.0
1.5
1.0
1.0
0.9
0.5
SD
0
-50
0
temperature
characteristics
T
J
=25°C
0
5
T
J
=-25°C
50
STF/I/P/U/W16N65M5
10
100
T
J
=150°C
I
SD
AM03185v1
AM03186v1
(A)
T
J
(°C)