STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 14
![MOSFET N-CH 650V 12A TO-247](/photos/29/4/290476/to-247_sml.jpg)
STW16N65M5
Manufacturer Part Number
STW16N65M5
Description
MOSFET N-CH 650V 12A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STW16N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 100V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10973-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
STF/I/P/U/W16N65M5
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
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Doc ID 15210 Rev 3