STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 7

• Manufacturer Part Number: STW16N65M5
• Description: MOSFET N-CH 650V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10973-5

STF/I/P/U/W16N65M5
Figure 8.
Figure 10. Normalized B
Figure 12. Output capacitance stored energy
(norm)
BV
1.00
0.98
1.02
0.96
0.94
E
1.08
1.06
1.04
(µJ)
(A)
DSS
20
15
10
I
oss
D
0
5
7
2
1
6
5
4
3
0
0
-50
0
Output characteristics
-25
100
5
200
0
V
GS
=10V
25
300
10
VDSS
50
400
75
vs temperature
500 600
15
100
6V
7V
6.5V
7.5V
V
T
DS
J
Doc ID 15210 Rev 3
(°C)
AM03187v1
(V)
AM03178v1
AM03312v1
V
DS
(V)
Figure 9.
Figure 11. Static drain-source on resistance
Figure 13. Capacitance variations
R
10000
0.280
0.270
0.260
0.230
1000
0.250
0.240
0.210
0.200
0.220
DS(on)
100
(pF)
(A)
(Ω)
10
I
C
D
15
20
10
0
1
5
0
0.1
0
Transfer characteristics
2
5
1
4
V
10
GS
Electrical characteristics
6
=10V
10
8
15
V
DS
10
100
=10V
20
12
V
V
GS
DS
I
D
AM03181v1
(V)
AM03179v1
AM03183v1
(A)
(V)
Ciss
Crss
Coss
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