STB23NM50N STMicroelectronics, STB23NM50N Datasheet - Page 7

• Manufacturer Part Number: STB23NM50N
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB23NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.162 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10874-2

STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
Output characteristics
Doc ID 16913 Rev 3
Figure 9.
Figure 13. Output capacitance stored energy
Transfer characteristics
Electrical characteristics
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