STB23NM50N STMicroelectronics, STB23NM50N Datasheet - Page 4

• Manufacturer Part Number: STB23NM50N
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB23NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.162 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10874-2

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. C
Table 7.
C
V
Symbol
Symbol
R
Symbol
CASE
V
oss eq.
(BR)DSS
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
t
C
C
t
Q
Q
DSS
GSS
Q
c(off)
d(off)
R
t
t
oss eq.
oss
r(v)
rss
f(i)
iss
gs
gd
g
g
=25 °C unless otherwise specified)
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-off crossing time
Voltage rise time
Turn-off delay time
Current fall time
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
DS
GS
= 0)
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Doc ID 16913 Rev 3
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DD
= 1 mA, V
V
R
(see Figure 17)
= max rating
= max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 400 V, I
= 10 V,
DD
G
Test conditions
= 4.7 Ω V
Test conditions
GS
= 250 V, I
Test conditions
, I
DS
GS
D
D
= 0 to 400 V
= 250 µA
D
= 8.5 A
= 0
= 17 A,
GS
D
= 17 A
= 10 V
Min.
500
Min.
Min.
2
-
-
-
-
-
0.162
Typ.
1330
Typ.
Typ. Max. Unit
210
4.8
4.6
84
45
24
6.6
3
19
71
29
7
oss
when V
Max. Unit
Max. Unit
0.19
0.1
10
1
4
-
-
-
-
-
DS
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
µA
Ω
V
V
Ω