STB23NM50N STMicroelectronics, STB23NM50N Datasheet - Page 3

• Manufacturer Part Number: STB23NM50N
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB23NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.162 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10874-2

STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
R
Symbol
dv/dt
Symbol
Symbol
R
R
I
thj-pcb
DM
P
V
thj-case
V
V
T
thj-amb
E
SD
I
TOT
I
I
T
ISO
GS
T
AR
DS
stg
D
D
AS
j
l
(2)
(3)
(1)
≤ 8.5 A, di/dt ≤ 400 A/µs, V
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case
max
Thermal resistance junction-pcb
minimum footprint
Thermal resistance junction-
ambient max
Maximum lead temperature for
soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
=25 °C)
Parameter
Parameter
Parameter
C
D
Doc ID 16913 Rev 3
= 25 °C
DD
= I
GS
= 80% V
AR
= 0)
, V
C
C
DD
= 25 °C
= 100 °C
(BR)DSS
= 50 V)
D²PAK
30
TO-220, D²PAK TO-247 TO-220FP
TO-247
125
17
11
68
62.5
1
Value
-55 to 150
Value
TO-220
± 25
500
150
15
Value
50
470
300
6
Electrical ratings
TO-220FP
17
11
68
4.17
62.5
2500
30
(1)
(1)
(1)
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
°C
W
V
V
A
A
A
V
A
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