STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet - Page 6

• Manufacturer Part Number: STL17N3LLH6
• Description: MOSFET N-CH 30V 17A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL17N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (3.3 x 3.3)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0038 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10880-2

Test circuits
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Figure 2.
Figure 4.
Figure 6.
Test circuits
Switching times test circuit for
resistive load
Test circuit for inductive load
switching and diode recovery times
Unclamped inductive waveform
Doc ID 15535 Rev 2
Figure 3.
Figure 5.
Figure 7.
Gate charge test circuit
Unclamped inductive load test
circuit
Switching time waveform
STL17N3LLH6