STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet - Page 5
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STL17N3LLH6
Manufacturer Part Number
STL17N3LLH6
Description
MOSFET N-CH 30V 17A POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Specifications of STL17N3LLH6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (3.3 x 3.3)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0038 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10880-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STL17N3LLH6
Manufacturer:
ST
Quantity:
24
Part Number:
STL17N3LLH6
Manufacturer:
VISHAY/威世
Quantity:
20 000
STL17N3LLH6
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 15535 Rev 2
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
= 17 A, V
= 17 A,
Test conditions
= 25 V
GS
= 0
Electrical characteristics
Min
-
-
-
-
Typ.
16.8
1.4
24
Max
1.1
17
68
Unit
nC
ns
A
A
V
A
5/10