STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet - Page 5

• Manufacturer Part Number: STL17N3LLH6
• Description: MOSFET N-CH 30V 17A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL17N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (3.3 x 3.3)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0038 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10880-2

STL17N3LLH6
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 15535 Rev 2
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
= 17 A, V
= 17 A,
Test conditions
= 25 V
GS
= 0
Electrical characteristics
Min
-
-
-
-
Typ.
16.8
1.4
24
Max
1.1
17
68
Unit
nC
ns
A
A
V
A
5/10