STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet

MOSFET N-CH 30V 17A POWERFLAT

STL17N3LLH6

Manufacturer Part Number
STL17N3LLH6
Description
MOSFET N-CH 30V 17A POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheets

Specifications of STL17N3LLH6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (3.3 x 3.3)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0038 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10880-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL17N3LLH6
Manufacturer:
ST
Quantity:
24
Part Number:
STL17N3LLH6
Manufacturer:
VISHAY/威世
Quantity:
20 000
Features
1. The value is rated according R
Application
Description
This product utilizes the 6
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
package, that makes it suitable for the most
demanding DC-DC converter applications, where
high power density has to be achieved.
Table 1.
July 2010
STL17N3LLH6
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Switching applications
DS(on)
STL17N3LLH6
Type
Order code
* Q
Device summary
g
industry benchmark
N-channel 30 V, 0.0038 Ω , 17 A PowerFLAT
V
30 V
DSS
th
generation of design
thj-pcb
DS(on)
0.0045 Ω
R
STripFET
max
DS(on)
DS(on)
Marking
17N3L
in a standard
17 A
Doc ID 15535 Rev 2
I
D
(1)
TM
VI DeepGATE
PowerFLAT™ (3.3 x 3.3)
Figure 1.
Package
PowerFLAT™ (3.3 x 3.3)
Internal schematic diagram
TM
STL17N3LLH6
Power MOSFET
Tape and reel
Packaging
TM
(3.3x3.3)
www.st.com
1/10
10

Related parts for STL17N3LLH6

STL17N3LLH6 Summary of contents

Page 1

... Order code STL17N3LLH6 July 2010 TM STripFET VI DeepGATE R DS(on max 0.0045 Ω ( DS(on) Figure standard DS(on) Marking 17N3L PowerFLAT™ (3.3 x 3.3) Doc ID 15535 Rev 2 STL17N3LLH6 TM (3.3x3.3) TM Power MOSFET PowerFLAT™ (3.3 x 3.3) Internal schematic diagram Package Packaging Tape and reel 1/10 www.st.com 10 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/ Doc ID 15535 Rev 2 STL17N3LLH6 ...

Page 3

... STL17N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (3) P Total dissipation at T TOT (1) P Total dissipation at T TOT Derating factor T Operating junction temperature J Storage temperature ...

Page 4

... 4 (see Figure 3) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Parameter Test conditions V = 15V 4.7Ω (see Figure 2) Doc ID 15535 Rev 2 STL17N3LLH6 Min. Typ. Max ± = 250 µ 8.5 A 0.0038 0.0045 D = 8.5 A 0.0057 0.0073 D Min. Typ. Max. 1690 ...

Page 5

... STL17N3LLH6 Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% ...

Page 6

... Switching times test circuit for resistive load Figure 4. Test circuit for inductive load switching and diode recovery times Figure 6. Unclamped inductive waveform 6/10 Figure 3. Gate charge test circuit Figure 5. Unclamped inductive load test circuit Figure 7. Switching time waveform Doc ID 15535 Rev 2 STL17N3LLH6 ...

Page 7

... STL17N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15535 Rev 2 Package mechanical data ® 7/10 ...

Page 8

... Doc ID 15535 Rev 2 STL17N3LLH6 inch MIN. TYP. MAX. 0.031 0.035 0.039 0.0007 0.0019 0.007 0.009 0.011 0.015 0.012 0.004 0.13 0.098 0.104 0.108 ...

Page 9

... STL17N3LLH6 5 Revision history Table 9. Document revision history Date 24-Mar-2009 06-Jul-2010 Revision 1 First release Table 5: On/off 2 Updated Doc ID 15535 Rev 2 Revision history Changes states. 9/10 ...

Page 10

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15535 Rev 2 STL17N3LLH6 ...

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