GP2S27TJ000F Sharp Microelectronics, GP2S27TJ000F Datasheet - Page 9

• Manufacturer Part Number: GP2S27TJ000F
• Description: PHOTOINTERRUPTER REFLEC .7MM SMD
• Manufacturer: Sharp Microelectronics

Specifications of GP2S27TJ000F

• Sensing Distance: 0.028" (0.7mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2051-2

■ Design Considerations
● Design guide
● Degradation
● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransister
1) Prevention of detection error
2) Distance characteristic
This product is not designed against irradiation and incorporates non-coherent IRED.
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
Infrared emitting diode
Black polyphenylene
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Please refer to Fig.10 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
(non-coherent)
sulfi de resin
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Maximum Sensitivity
Material
Lead frame
42Alloy
wavelength (nm)
930
9
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
SnCu plating
700 to 1 200
950
Sensitivity
GP2S27J0000F Series
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A01901EN
0.3
20