STGIPS10K60A STMicroelectronics, STGIPS10K60A Datasheet - Page 11

• Manufacturer Part Number: STGIPS10K60A
• Description: MOD IPM 600V 10A 25-SDIP
• Manufacturer: STMicroelectronics
• Type: IGBTr

Specifications of STGIPS10K60A

• Configuration: 3 Phase
• Current: 10A
• Voltage: 600V
• Voltage - Isolation: 2500VDC
• Package / Case: PCB Module
• Module Configuration: 3-Phase Bridge
• Transistor Polarity: N Channel
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 33W
• Operating Temperature Range: -40°C To
• Rohs Compliant: Yes
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 10 A
• Power Dissipation: 26 W
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Operating Temperature (max): 125C
• Operating Temperature (min): -40C
• Pin Count: 25
• Mounting: Through Hole
• Screening Level: Automotive
• For Use With: 497-10836 - POWER BOARD STGIPS10K60A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10404-5

STGIPS10K60A
1. Simulated curves refer to typical IGBT parameters and maximum R
Figure 6.
Figure 8.
I
C (RMS)
HVG
LVG
H IN
LIN
(A)
12
10
8
6
4
Minimum recommended dead time (DT) between low and high side logic input: 1 µs.
Maximum I
switching frequency
Dead time and interlocking definition
6
V
PN
T
PF = 0.6, T
C
8
= 300 V, Modulation index = 0.8,
= 100 °C
10
j
= 150 °C, f
C(RMS)
12
14
SINE
current vs.
= 60 Hz
16
T
(1)
C
= 80 °C
f
sw
(kHz)
AM03801v1
Doc ID 15587 Rev 7
Figure 7.
DT
I
C (RMS)
thj-c
(A)
4
6
5
.
7
8
1
DT
Maximum I
(1)
fsw = 16 kHz
V
fsw = 12 kHz
PN
PF = 0.6, T
= 300 V, Modulation index = 0.8,
DT
fsw = 20 kHz
j
= 150 °C, T
C(RMS)
10
Electrical characteristics
c
= 100 °C
current vs. f
f
SINE
AM03794v1
AM03802v1
(Hz)
SINE
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