APTM100UM65DAG Microsemi Power Products Group, APTM100UM65DAG Datasheet - Page 6

• Manufacturer Part Number: APTM100UM65DAG
• Description: MOSFET N-CH 1000V 145A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100UM65DAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 5V @ 20mA
• Gate Charge (qg) @ Vgs: 1068nC @ 10V
• Input Capacitance (ciss) @ Vds: 28500pF @ 25V
• Power - Max: 3250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
300
250
200
150
100
160
120
50
80
40
16
14
12
10
0
0
8
6
4
2
0
15
50
Operating Frequency vs Drain Current
50
V
D=50%
R
T
T
V
R
T
L=100µH
DS
J
C
G
V
R
T
L=100µH
=125°C
=75°C
Switching Energy vs Current
J
=0.75Ω
DS
G
J
DS
=125°C
G
=670V
=125°C
=0.75Ω
=0.75Ω
35
=670V
=670V
94
Delay Times vs Current
94
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
55
138
138
switching
75
Hard
182
182
ZCS
95
E
on
E
t
226
off
226
d(on)
115
t
d(off)
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270
270
135
APTM100UM65DAG
1000
100
100
10
80
60
40
20
26
22
18
14
10
1
0
6
2
0.2 0.4 0.6 0.8
Source to Drain Diode Forward Voltage
50
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
D
DS
J
V
G
J
Rise and Fall times vs Current
DS
=145A
=125°C
=125°C
=0.75Ω
1
SD
=670V
=670V
T
94
, Source to Drain Voltage (V)
J
=150°C
Gate Resistance (Ohms)
E
I
2
off
D
, Drain Current (A)
138
3
T
1
4
J
=25°C
182
1.2 1.4 1.6 1.8
5
E
off
t
f
t
226
6
r
E
on
7
270
8
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