APTM100UM65DAG Microsemi Power Products Group, APTM100UM65DAG Datasheet - Page 3

• Manufacturer Part Number: APTM100UM65DAG
• Description: MOSFET N-CH 1000V 145A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100UM65DAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 5V @ 20mA
• Gate Charge (qg) @ Vgs: 1068nC @ 10V
• Input Capacitance (ciss) @ Vds: 28500pF @ 25V
• Power - Max: 3250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Thermal and package characteristics
Symbol Characteristic
Torque
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To Heatsink
For teminals
APTM100UM65DAG
Transistor
Series diode
M6
M5
2500
Min
-40
-40
-40
3
2
Typ
0.038
Max
0.23
150
125
100
280
3.5
5
°C/W
Unit
N.m
°C
V
g
3 – 6