APTM120TDU57PG Microsemi Power Products Group, APTM120TDU57PG Datasheet - Page 5

• Manufacturer Part Number: APTM120TDU57PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120TDU57PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 5155pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Crss
www.microsemi.com
Ciss
50
100
14
12
10
10
APTM120TDU57PG
8
6
4
2
0
1
0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
1
0
-50 -25
limited by R
I
T
D
J
V
I
=17A
D
=25°C
V
GS
Maximum Safe Operating Area
=8.5A
T
40
DS
ON resistance vs Temperature
=10V
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
Single pulse
T
T
J
C
=150°C
=25°C
0
DS
Gate Charge (nC)
10
80
on
25
V
DS
=600V
120
50
V
75 100 125 150
100
DS
160
=240V
V
200
10ms
DS
100µs
=960V
1ms
1000
1200
240
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