APTM120TDU57PG Microsemi Power Products Group, APTM120TDU57PG Datasheet

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APTM120TDU57PG

Manufacturer Part Number
APTM120TDU57PG
Description
MOSFET MOD TRIPLE DUAL SRC SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM120TDU57PG

Fet Type
6 N-Channel (3-Phase Leg)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
684 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
187nC @ 10V
Input Capacitance (ciss) @ Vds
5155pF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
S1
S2
G2
R
V
MOSFET Power Module
D1
D2
V
E
E
I
Triple dual common source
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
S1/S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
D 1
D 2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S1/S2
G1
G2
S1
S2
G3
S3
S4
G4
D3
D4
S3/S4
D 3
D 4
Parameter
G3
G4
S3
S4
S3/S4
S5/S6
D 5
G5
S5
S6
G6
D 6
D5
D6
G5
G6
S5
S6
www.microsemi.com
S5/S6
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 17A @ Tc = 25°C
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
-
-
-
-
-
= 1200V
APTM120TDU57PG
= 570mΩ typ @ Tj = 25°C
-
-
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Max ratings
Symmetrical design
Lead frames for power connections
DSon
1200
3000
±30
684
390
17
13
68
22
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM120TDU57PG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120TDU57PG V = 1200V DSS R = 570mΩ typ @ Tj = 25°C DSon I = 17A @ Tc = 25°C D ...

Page 2

... SD dv/dt Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 17A di/dt ≤ 700A/µ APTM120TDU57PG = 25°C unless otherwise specified j Test Conditions V = 0V,V = 1200V 0V,V = 1000V T GS ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM120TDU57PG To heatsink M6 www.microsemi.com Min Typ Max Unit 0.32 °C/W 2500 V -40 150 ° ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 8.5A 1 1.1 1 0.9 0 Drain Current (A) D APTM120TDU57PG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature 20 16 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM120TDU57PG ON resistance vs Temperature 2.5 V =10V GS I =8.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120TDU57PG 80 t ...

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