APTM20DHM08G Microsemi Power Products Group, APTM20DHM08G Datasheet - Page 5

• Manufacturer Part Number: APTM20DHM08G
• Description: MOSFET MOD ASSYMMETRIC BRDG SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20DHM08G

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 104A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 208A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 14400pF @ 25V
• Power - Max: 781W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Crss
Coss
Ciss
50
www.microsemi.com
1000
100
10
14
12
10
1
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
APTM20DHM08G
-50 -25
limited by
R
Single pulse
T
T
DSon
I
T
V
D
J
C
J
V
I
40
=150°C
=208A
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
DS
=25°C
GS
= 104A
T
, Drain to Source Voltage (V)
J
=10V
, Junction Temperature (°C)
80 120 160 200 240 280 320
0
10
Gate Charge (nC)
25
50
V
DS
75 100 125 150
100
=100V
V
DS
V
100µs
1ms
10ms
100ms
DS
=40V
=160V
1000
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