APTM20DHM08G Microsemi Power Products Group, APTM20DHM08G Datasheet - Page 4

• Manufacturer Part Number: APTM20DHM08G
• Description: MOSFET MOD ASSYMMETRIC BRDG SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20DHM08G

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 104A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 208A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 14400pF @ 25V
• Power - Max: 781W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1400
1200
1000
1.2
1.1
0.9
0.8
0.1
800
600
400
200
0.00001
1
0
0
Low Voltage Output Characteristics
0
0
Normalized to
V
0.9
0.7
0.5
0.3
0.1
0.05
GS
V
=10V @ 104A
DS
50
4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
I
DS(on)
D
, Drain Current (A)
100
8
0.0001
vs Drain Current
12
V
150
GS
10V
=15V
16
200
9V
20
8.5V
V
V
250
0.001
GS
GS
24
=10V
=20V
8V
rectangular Pulse Duration (Seconds)
7.5V
6.5V
7V
300
28
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Single Pulse
0.01
600
500
400
300
200
100
250
200
150
100
50
0
0
DC Drain Current vs Case Temperature
25
0
APTM20DHM08G
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
1
GS
> I
T
Transfert Characteristics
, Gate to Source Voltage (V)
D
50
2
C
(on)xR
, Case Temperature (°C)
3
T
J
DS
=125°C
75
4
(on)MAX
T
J
=25°C
5
1
100
6
7
T
J
125
=-55°C
8
9 10
10
150
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