APTM120SK15G Microsemi Power Products Group, APTM120SK15G Datasheet - Page 5

• Manufacturer Part Number: APTM120SK15G
• Description: MOSFET N-CH 1200V 60A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120SK15G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 748nC @ 10V
• Input Capacitance (ciss) @ Vds: 20600pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Crss
Ciss
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50
1000
14
12
10
100
8
6
4
2
0
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Gate Charge vs Gate to Source Voltage
0
-50 -25
1
I
T
D
limited by R
J
V
I
=60A
D
=25°C
GS
Maximum Safe Operating Area
=30A
V
160
APTM120SK15G
T
ON resistance vs Temperature
DS
=10V
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
320
Gate Charge (nC)
10
DS
Single pulse
T
T
J
C
25
on
V
=150°C
=25°C
DS
=600V
480
50
V
75 100 125 150
DS
100
640
=240V
V
800
DS
100µs
10ms
1ms
=960V
1000
1200
960
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