APTM120SK15G Microsemi Power Products Group, APTM120SK15G Datasheet

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... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120SK15G V = 1200V DSS R = 150mΩ typ @ Tj = 25°C DSon I = 60A @ Tc = 25°C D Application • ...

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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM120SK15G = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1200V T = 25° 0V,V = 1000V T = 125°C GS ...

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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120SK15G Min Transistor Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

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... V 280 250µs pulse test @ < 0.5 duty cycle 7V 240 6.5V 200 160 6V 120 80 5. Drain Current vs Case Temperature =10V =20V 120 160 25 www.microsemi.com APTM120SK15G 0 Transfert Characteristics > I (on)xR (on)MAX =25° =125°C T =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° ...

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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM120SK15G ON resistance vs Temperature 2.5 V =10V GS I =30A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

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... Source to Drain Diode Forward Voltage 1000 100 ZVS 10 1 0.2 0.4 0.6 0 www.microsemi.com APTM120SK15G Rise and Fall times vs Current =800V t f =1.2Ω =125° 100 120 140 I , Drain Current (A) ...