APTM50DAM38CTG Microsemi Power Products Group, APTM50DAM38CTG Datasheet - Page 4

• Manufacturer Part Number: APTM50DAM38CTG
• Description: MOSFET N-CH 500V 90A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DAM38CTG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 246nC @ 10V
• Input Capacitance (ciss) @ Vds: 11200pF @ 25V
• Power - Max: 694W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical MOSFET Performance Curve
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.16
0.12
0.08
0.04
350
300
250
200
150
100
0.2
50
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
0.9
0.7
0.5
0.05
GS
0.3
0.1
V
DS
=10V @ 45A
V
GS
, Drain to Source Voltage (V)
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
=10&15V
DS
I
50
D
, Drain Current (A)
(on) vs Drain Current
0.0001
10
100
15
V
GS
=10V
V
150
GS
=20V
20
8V
rectangular Pulse Duration (Seconds)
0.001
7.5V
6.5V
5.5V
7V
6V
200
25
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Single Pulse
0.01
APTM50DAM38CTG
250
200
150
100
50
100
0
80
60
40
20
0
DC Drain Current vs Case Temperature
0
25
V
250µs pulse test @ < 0.5 duty cycle
DS
V
0.1
1
> I
GS
T
D
Transfert Characteristics
, Gate to Source Voltage (V)
(on)xR
50
C
, Case Temperature (°C)
2
T
J
DS
=125°C
3
(on)MAX
75
T
J
=25°C
4
1
100
5
6
125
T
J
=-55°C
7
10
150
8
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