APTM50DAM38CTG Microsemi Power Products Group, APTM50DAM38CTG Datasheet

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APTM50DAM38CTG

Manufacturer Part Number
APTM50DAM38CTG
Description
MOSFET N-CH 500V 90A SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM50DAM38CTG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
246nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
694W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
VBUS SENSE
G2
S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
VBUS
SENSE
Boost chopper
SiC FWD diode
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
0/VBU S
Q2
CR1
0/VBUS
G2
G2
S2
S2
VBUS
Parameter
OUT
NT C2
NT C1
NTC2
NTC1
OUT
OUT
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
APTM50DAM38CTG
= 90A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Power MOS 7
FWD SiC Schottky Diode
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
= 500V
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
= 38mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Symmetrical design
Lead frames for power connections
Max ratings
DSon
2500
500
360
±30
694
90
67
45
46
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTM50DAM38CTG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM50DAM38CTG V = 500V DSS R = 38mΩ typ @ Tj = 25°C DSon I = 90A @ Tc = 25°C D Application • ...

Page 2

... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C Q Total Capacitance APTM50DAM38CTG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 500V 0V,V = 400V T = 125° ...

Page 3

... Resistance @ 25° 298.15 K 25/  exp B   SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM50DAM38CTG Transistor Diode To heatsink R T: Thermistor temperature 25    Thermistor value   −   ...

Page 4

... Drain to Source Voltage ( (on) vs Drain Current DS 1.20 Normalized to 1.15 V =10V @ 45A GS 1.10 1.05 1.00 0.95 0.90 0.85 0. 100 I , Drain Current (A) D APTM50DAM38CTG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 250 8V 200 7.5V 150 7V 100 6. 5. Drain Current vs Case Temperature 100 V =10V ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM50DAM38CTG ON resistance vs Temperature 2.5 V =10V GS I =45A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... R =2Ω G ZCS ZVS T =125°C 250 J T =75°C C 200 150 Hard 100 switching Drain Current (A) D APTM50DAM38CTG Rise and Fall times vs Current 120 V =333V DS 100 R =2Ω =125° L=100µ 140 Drain Current (A) D Switching Energy vs Gate Resistance 8 V ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM50DAM38CTG Single Pulse 0.001 ...

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