APTM120A29FTG Microsemi Power Products Group, APTM120A29FTG Datasheet - Page 4

• Manufacturer Part Number: APTM120A29FTG
• Description: MOSFET MODULE PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120A29FTG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 348 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 374nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1.4
1.3
1.2
1.1
0.9
0.8
100
0.1
80
60
40
20
1
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
GS
V
0.05
=10V @ 17A
0.5
0.9
0.7
0.3
0.1
DS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
, Drain to Source Voltage (V)
R
20
DS(on)
I
D
, Drain Current (A)
V
10
GS
vs Drain Current
0.0001
=15, 10 & 8V
40
15
V
GS
=10V
20
V
60
GS
0.001
rectangular Pulse Duration (Seconds)
=20V
25
5.5V
7V
6.5V
6V
5V
30
80
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0.01
Single Pulse
40
30
20
10
160
140
120
100
0
80
60
40
20
0
25
DC Drain Current vs Case Temperature
0
V
250µs pulse test @ < 0.5 duty cycle
APTM120A29FTG
DS
0.1
V
1
> I
GS
T
50
Transfert Characteristics
D
C
(on)xR
, Gate to Source Voltage (V)
, Case Temperature (°C)
2
T
DS
J
=125°C
3
(on)MAX
75
T
J
=25°C
4
1
100
5
6
T
J
=-55°C
125
7
8
10
150
9
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