APTM120A29FTG Microsemi Power Products Group, APTM120A29FTG Datasheet

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APTM120A29FTG

Manufacturer Part Number
APTM120A29FTG
Description
MOSFET MODULE PHASE LEG SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM120A29FTG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
348 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
374nC @ 10V
Input Capacitance (ciss) @ Vds
10300pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
G1
S1
G2
S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
S1
G1
VB US
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Phase Leg
0/VBUS
Q1
Q2
0/VBUS
G2
S2
G2
S2
Parameter
VBUS
OUT
NTC2
NTC1
NT C2
NT C1
OUT
OUT
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 34A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
= 1200V
= 290mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
APTM120A29FTG
Max ratings
DSon
1200
3000
136
±30
348
780
34
25
22
50
®
FREDFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM120A29FTG Summary of contents

Page 1

... Low junction to case thermal resistance OUT • Solderable terminals both for power and signal for easy PCB mounting NTC2 • Low profile NTC1 • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTM120A29FTG ® FREDFETs DSon Max ratings Unit 1200 136 ±30 V 348 mΩ 780 ...

Page 2

... 34A 125° 600V 25°C di /dt = 200A/µ 125°C j ≤ V ≤ 150° DSS j www.microsemi.com APTM120A29FTG Min Typ Max Unit 350 = 25°C µA 1500 = 125°C 290 348 mΩ ±150 nA Min Typ Max Unit 10.3 nF 1.54 0.26 374 ...

Page 3

... R : Thermistor value     −     25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTM120A29FTG Min Typ Max Unit 0.16 °C/W 2500 V -40 150 °C -40 125 -40 100 M5 2.5 4.7 N.m 160 g Min Typ ...

Page 4

... Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 17A 1 1.1 1 0.9 0 Drain Current (A) D APTM120A29FTG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 160 V DS 140 250µs pulse test @ < 0.5 duty cycle 7V 120 6.5V 100 5. ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM120A29FTG ON resistance vs Temperature 2.5 V =10V GS I =17A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120A29FTG 80 t ...

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