APTM120DU29TG Microsemi Power Products Group, APTM120DU29TG Datasheet - Page 6

• Manufacturer Part Number: APTM120DU29TG
• Description: MOSFET MOD DUAL COMMON SRC SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120DU29TG

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 348 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 374nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
225
200
175
150
125
100
180
150
120
75
50
25
90
60
30
0
0
6
5
4
3
2
1
0
10
10
8
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
V
R
T
L=100µH
DS
J
C
G
=125°C
=75°C
Switching Energy vs Current
J
DS
=2.5Ω
DS
G
J
G
=125°C
=800V
=125°C
=2.5Ω
=2.5Ω
=800V
=800V
12
20
20
Delay Times vs Current
I
I
I
ZCS
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
30
16
30
switching
Hard
20
40
40
24
50
50
ZVS
E
t
E
d(on)
on
off
t
d(off)
60
60
28
70
70
32
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1000
100
80
60
40
20
10
0
7
6
5
4
3
2
1
1
10
0.0
0.2 0.4 0.6 0.8
Source to Drain Diode Forward Voltage
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
APTM120DU29TG
D
DS
G
J
J
DS
=34A
=125°C
=125°C
2.5
=2.5Ω
V
Rise and Fall times vs Current
=800V
20
=800V
SD
T
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
J
=150°C
5.0
I
D
, Drain Current (A)
30
E
off
7.5 10.0 12.5 15.0 17.5
40
T
1
J
=25°C
1.2 1.4 1.6 1.8
50
t
t
f
r
E
E
on
off
60
70
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