APTM120DU29TG Microsemi Power Products Group, APTM120DU29TG Datasheet
APTM120DU29TG
Specifications of APTM120DU29TG
Related parts for APTM120DU29TG
APTM120DU29TG Summary of contents
Page 1
... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120DU29TG V = 1200V DSS R = 290mΩ typ @ Tj = 25°C DSon I = 34A @ Tc = 25°C D Application • ...
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... D G Test Conditions Tc = 25° 80° 0V 34A 34A ; V = 600V /dt = 200A/µs S ≤ V ≤ 150° DSS j www.microsemi.com APTM120DU29TG Min Typ Max Unit 350 = 25°C µA 1500 = 125°C 290 348 mΩ ±150 nA Min Typ Max Unit 10.3 nF 1.54 0.26 374 ...
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... R : Thermistor value − 25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTM120DU29TG Min Typ Max Unit 0.16 °C/W 2500 V -40 150 °C -40 125 -40 100 M5 2.5 4.7 N.m 160 g Min Typ ...
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... Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 17A 1 1.1 1 0.9 0 Drain Current (A) D APTM120DU29TG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 160 V DS 140 250µs pulse test @ < 0.5 duty cycle 7V 120 6.5V 100 5. ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM120DU29TG ON resistance vs Temperature 2.5 V =10V GS I =17A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120DU29TG 80 t ...