APTM100DU18TG Microsemi Power Products Group, APTM100DU18TG Datasheet - Page 6

• Manufacturer Part Number: APTM100DU18TG
• Description: MOSFET MOD DUAL COMMON SRC SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100DU18TG

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 372nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
200
160
120
250
200
150
100
80
40
50
0
5
4
3
2
1
0
0
10
10
10
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
D=50%
R
T
Tc=75°C
V
R
T
L=100µH
J
DS
J
DS
G
G
=125°C
=125°C
Switching Energy vs Current
=2.5Ω
DS
G
J
=2.5Ω
=670V
=125°C
=670V
=2.5Ω
=670V
15
Delay Times vs Current
30
30
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
ZCS
switching
20
Hard
50
50
25
ZVS
E
30
E
on
off
70
70
t
d(on)
t
35
d(off)
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90
90
40
1000
100
80
60
40
20
10
0
7
6
5
4
3
2
1
0
1
10
0.2 0.4 0.6 0.8
Source to Drain Diode Forward Voltage
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
APTM100DU18TG
V
I
T
L=100µH
D
DS
G
J
DS
J
=43A
=125°C
=125°C
=2.5Ω
V
Rise and Fall times vs Current
=670V
=670V
SD
T
, Source to Drain Voltage (V)
J
Gate Resistance (Ohms)
30
=150°C
E
5
I
D
off
, Drain Current (A)
50
10
T
1
J
=25°C
1.2 1.4 1.6 1.8
E
t
off
t
E
f
r
on
15
70
20
90
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